Modelling the d.c. performance of GaAs homojunction bipolar transistorsLEE, S.-P; PULFREY, D. L.Solid-state electronics. 1986, Vol 29, Num 7, pp 713-723, issn 0038-1101Article

Study of a buried SIN⁺P homojunction solar cellROY, S. B; ASH, M. C; DAW, A. N et al.Solid-state electronics. 1987, Vol 30, Num 2, pp 155-159, issn 0038-1101Article

High performance GaAs homojunction far-infrared detectorsPERERA, A. G. U; SHEN, W. Z; LIU, H. C et al.SPIE proceedings series. 1998, pp 280-287, isbn 0-8194-2726-8Conference Paper

Influence of degeneracy on behaviour of homojunction GaAs bipolar transistorBAILBE, J. P; MARTY, A; REY, G et al.Electronics Letters. 1984, Vol 20, Num 6, pp 258-259, issn 0013-5194Article

LIQUID-PHASE-EPITAXY HOMOSTRUCTURE PB_0-85SN_0-15 TE DIODE LASER WITH CONTROLLED CARRIER CONCENTRATIONORON M; ZUSSMAN A.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 7-9; BIBL. 8 REF.Article

VARIATION OF SPONTANEOUS EMISSION WITH CURRENT IN GAAS HOMOSTRUCTURE AND DOUBLE-HETEROSTRUCTURE INJECTION LASERSBROSSON P; RIPPER JE; PATEL NB et al.1973; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 2; PP. 273-280; BIBL. 11 REF.Serial Issue

Strained-layer homojunction GaAs bipolar transistor with enhanced current gainSCHUMMERS, R; NAROZNY, P; BENEKING, H et al.Electronics Letters. 1986, Vol 22, Num 17, pp 924-925, issn 0013-5194Article

CD-DIFFUSED PB_1-XSN_XTE LASERS WITH HIGH OUTPUT POWER.LO W.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 604-606; BIBL. 4 REF.Conference Paper

NEAR-FIELD EMISSION OF LEAD-SULFIDE-SELENIDE HOMOJUNCTION LASERSKIMBLE HJ.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 7; PP. 740-743; BIBL. 15 REF.Article

INVESTIGATION OF THE DIELECTRIC WAVEGUIDE MODES IN HOMOSTRUCTURE GAAS LASERPHILIPP RUTZ EM.1973; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 2; PP. 282-290; BIBL. 10 REF.Serial Issue

CuInSe₂ homojunction diode fabricated by phosphorus dopingKOHIKI, S; NISHITANI, M; NEGAMI, T et al.Applied physics letters. 1993, Vol 62, Num 14, pp 1656-1657, issn 0003-6951Article

ETUDE DE LA LUMINESCENCE AMPLIFIEE DANS LES LASERS A INJECTION AU GAAS.GRIBKOVSKIJ VP; MARKRITSKIJ YU V; MEZHEVICH ID et al.1978; ZH. PRIKL. SPEKTROSK.; BYS; DA. 1978; VOL. 29; NO 1; PP. 26-29; ABS. ENG; BIBL. 17 REF.Article

TIME DELAYS AND Q SWITCHING IN HOMOSTRUCTURE AND HETEROSTRUCTURE INJECTION LASERSADAMS MJ; GRUNDORFER S; THOMAS B et al.1973; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 2; PP. 328-337; BIBL. 38 REF.Serial Issue

LOW THRESHOLD CURRENT LEAD-TELLURIDE DIODE LASERS GROWN BY MOLECULAR BEAM EPITAXYPARTIN DL; LO W.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 3; PART. 1; PP. 1579-1582; BIBL. 7 REF.Article

Cascaded homojunction avalanche photodiodesCHOA, F. S; LIU, P. L.Fiber and integrated optics. 1988, Vol 7, Num 1, pp 1-15, issn 0146-8030Article

Absolute movement of energy levels in junctions formed by dissimilar materialsDRONAVALLI, Smitha; JINDAL, Renuka P.IEEE electron device letters. 2005, Vol 26, Num 8, pp 524-526, issn 0741-3106, 3 p.Article

Current transport through a single Si atom junction on Si(111)-7 × 7 surfacesHASUNUMA, R; TOKUMOTO, H.Surface science. 1999, Vol 433-35, pp 17-21, issn 0039-6028Article

Depth profiling of CdS homojunction using AES analysisVARKEY, K. P; VIJAYAKUMAR, K. P; IMAI, J et al.Bulletin of materials science. 1997, Vol 20, Num 8, pp 1085-1087, issn 0250-4707Article

The concept of two mobilities in homoepitaxial growthROSENFELD, G; POELSEMA, B; COMSA, G et al.Journal of crystal growth. 1995, Vol 151, Num 1-2, pp 230-233, issn 0022-0248Article

Fabrication et caractérisation des matériaux CuInSe₂ N et ZnO obtenus par pulvérisation chimique réactive Spray. Application aux photopiles solaires = Growth and characterization of CuInSe₂ N type and ZnO by chemical Spray pyrolysis for fabrication of solar cellsBelghit, Khalid; Bougnot, Josiane; Duchemin, Simone et al.1991, 189 p.Thesis

Coherent transport in a homojunction between an excitonic insulator and semimetalRONTANI, Massimo; SHAM, L. J.Physical review letters. 2005, Vol 94, Num 18, pp 186404.1-186404.4, issn 0031-9007Article

Effects of oxidized layers on built-in potentials in ITO/InP solar cellsHENRY, J; LIVINGSTONE, J.International journal of electronics. 1997, Vol 83, Num 3, pp 317-324, issn 0020-7217Article

Formulation of a tail electron hydrodynamic model based on Monte Carlo resultsCHIANG-SHENG YAO; JAE-GYUNG AHN; YOUNG-JUNE PARK et al.IEEE electron device letters. 1995, Vol 16, Num 1, pp 26-29, issn 0741-3106Article

2.6 μm InGaAs photodiodesMARTINELLI, R. U; ZAMEROWSKI, T. J; LONGEWAY, P. A et al.Applied physics letters. 1988, Vol 53, Num 11, pp 989-991, issn 0003-6951Article

Two-dimensional dopant profiling and imaging of 4H silicon carbide devices by secondary electron potential contrastBUZZO, M; CIAPPA, M; STANGONI, M et al.Microelectronics and reliability. 2005, Vol 45, Num 9-11, pp 1499-1504, issn 0026-2714, 6 p.Conference Paper